This paper presents results of investigation on the effects of technology on the performance of the class E power amplifier circuit. A typical class E circuit has been designed and simulated, for a typical UMTS Tx frequency (1.95 GHz) and output power ( 27dBm). Three different technologies have been used (silicon BJT, CMOS and GaAs HBT) and several important parameters (output efficiency, power...

In this work, dynamic load modulation of high power amplifiers using a varactor-based tunable matching network is presented. The feasibility of dynamic tuning and efficiency enhancement of this technique is demonstrated using a modular design approach for two existing high efficiency power amplifiers (PA), a 7-W class-E, and a 10-W class-J power amplifier PA at 1 GHz. For this purpose and for e...

Abstract − The switched-mode second-order Class E configuration with a generalized load network including the shunt capacitance, series bondwire inductance, finite DC feed inductance and series LC circuit is analytically defined with a set of the exact design equations. Based on these equations, the required voltage and current waveforms and circuit parameters are determined for both general ca...

In this contribution, an inverse-class-F (F -1 ) power amplifier at 1.7 GHz using GaN device is proposed and experimentally tested. The novelty in the design is the use of a three-layers rectangular slot resonators in microstrip line’s ground plane as harmonic filter. In particular, a planar periodic structure composed by two different slot resonators is used to control 2 nd , 3 rd harmonics an...

In this paper, distortion in the output envelope of AM modulated a class E RF power amplifier with a nonlinear capacitance with the grading coefficient 5 . 0 = m is analyzed. The calculation of output amplitude incorporates the influence of power loss versus dc supply voltage. Derivation of half cycle output voltage waveform is done with incorporating output amplitude as a function of dc supply...

This paper presents the design of a high efficiency, low THD, 5.7GHz fully differential power amplifier for wireless communications in a standard 0.18μm CMOS technology. The power amplifier employs a fully differential class-E topology to achieve high power efficiency by exploiting its soft-switching property. In order to achieve high operating frequency, an injectionlocked oscillator is utiliz...

a novel low noise trans-impedance amplifier is proposed using low cost 0.18 µm cmos technology. a resistive-capacitive feedback is used to extend the bandwidth of the amplifier. as the structure is inductor less, it is suitable for low cost integrated optical interconnects. in this paper improved particle swarm optimization have applied to determine optimal trans-resistance and noise of propose...

In RFID reader systems, power amplifier plays a critical rule for efficiency enhancement. A high efficiency power amplifier may not only increase the life expectancy of portable RFID devices but also reduce the reliance on heat sinks. Heat sinks usually occupy plenty of space and lead to packing difficulties. A well-designed power amplifier with high efficiency and output power may also increas...