Ion Beam Implantation Aluminium nitride (AlN) is central to a range of RF filter and resonators at the heart 5G technologies. Under suitable conditions, as shown by Holger Fiedler, John Kennedy co-workers in article number 2100358, piezoelectric modulus epitaxial AlN increases ion beam implantation noble gases. This effect originates from finite volume deformed with giant piezoelectricity; stab...

The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides. PACS: 66.30, 81.40, 81.60, 61.70 Since the introduction of ion implantation as a surface modification technique, the electrical [1, 2], optical [3], magn...

Ion Implantation In article number 2000237 by Nathan Cassidy, Roger Webb, David Cox, and co-workers, preliminary results are presented from the first commercially produced implanter specifically designed for rapid precise positioning of single ions into device structures solid state quantum technology applications. Specifically implantation bismuth Si, Ge, Cu, Au reported, counting detection ef...

Ion implantation, a common technology in semiconductor processing, has been applied to biomaterials since the 1960s. Using energetic ion bombardment, a general term which includes conventional ion implantation plasma immersion ion implantation (PIII) and ion beam assisted thin film deposition, functionalization of surfaces is possible. By varying and adjusting the process parameters, several su...

Ion implantation of dopant impurities to form p-n junctions and other doped regions in silicon transistors has evolved from an experimental curiosity in solid-state physics to become a dominant technology in today’s integrated circuit manufacturing. This paper traces the key inventions and early developments in ion beam doping concepts from the early 1950’s through the 1970’s as they were appli...