Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method...

To sustain transistor scaling beyond lateral 7 nm devices, gate-all-around (GAA) junctionless vertical nanowire field effect transistors (JLNT) are one of the promising alternatives. overcome roadblocks logic cell design using this emerging technology, work explores compact modeling 3D GAA-JLNTs based on physics transport. The model features an explicit continuous analytical form drain current ...

A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (10(15)) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off...

Article history: Received 2 February 2016 Received in revised form 10 May 2016 Accepted 16 May 2016 Available online 9 June 2016 Thiswork proposes a numerical charge-based newmodel to describe the drain current for triple gate junctionless nanowire transistors (3G JNT). The drain current is obtained through a numerical integration of a single expression that physically describes the junctionles...

A comprehensive study of the drain current drift mechanism and hysteresis phenomena in fabricated p-channel junctionless ion-sensitive field-effect transistor (JL-ISFET) has been investigated for first time. The measurements have performed through transient analysis current, under different pH liquid-gate bias (Vlg). Further, time-dependent gate-capacitance (CG) also analyzed to see effect hydr...