introduction: dyspepsia, gastroesophageal reflux disease (gerd) and irritable bowel syndrome (ibs) are the most common gastrointestinal diseases. their prevalence is 18-30%, 25-30% and 10-15% in western communities and 8-14%, 3-7% and 3-5% in eastern countries, respectively. there is no adequate data about their prevalence in our country. the aim of this study is to determine the prevalence of ...

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In this paper, we study the class of of C3-like Finsler metrics which contains the class of semi-C-reducible Finsler metric. We find a condition on C3-like metrics under which the notions of Landsberg curvature and mean Landsberg curvature are equivalent.

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

the extended homogeneous balance method is used to construct exacttraveling wave solutions of the maccari system, in which thehomogeneous balance method is applied to solve the riccati equationand the reduced nonlinear ordinary differential equation. many exacttraveling wave solutions of the maccari system equation aresuccessfully obtained.

results the tlr3 protein in the ach group tended toward reduction although the p value of the comparison between the ach group and hd group was not statistically significant. the tlr3 levels in the hcc, ac, and cir groups were higher than those in the hd and ach groups. tlr3 was not interrelated with all costimulation proteins in the dcs and t cells in all five groups. no group presented any in...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...