نتایج جستجو برای: lpcvd

تعداد نتایج: 265  

2008
Bruno Morana Andrés Rodríguez Jesús Sangrador Tomás Rodríguez Óscar Martínez Juan Jiménez Andreas Kling

Nanocrystals embedded in an oxide matrix have been fabricated by annealing SiGeO films deposited by LPCVD. The composition of the oxide layers and its evolution after annealing as well as the presence and nature of nanocrystals in the films have been studied by several experimental techniques. The results are analyzed and discussed in terms of the main deposition parameters and the annealing te...

2016
G. Dabos D. Tsiokos

We demonstrate TM grating couplers for LPCVD silicon nitride platform with coupling loss of 6.5dB at 1541nm and 1dB bandwidth of 55nm employing optical projection lithography for low-cost and mass manufacturing of photonic integrated circuits. OCIS codes: (350.2770) Gratings; (250.5300) Photonic integrated circuits

Journal: :Coatings 2022

In the present work, a low-pressure chemical vapor deposition (LPCVD) Ti0.17Al0.83N and state-of-the-art arc ion plating PVD-Ti1−xAlxN (x = 0.25, 0.55, 0.60, 0.67) coatings were deposited on cemented carbide substrate. The morphological, structural, electrochemical properties of LPCVD-Ti0.17Al0.83N compared. X-ray diffraction (XRD) results scanning electron microscopy (SEM) images revealed that...

Journal: :Surface & Coatings Technology 2021

Abstract In this work, Ti1-xAlxN (TiAlN) coatings were synthesized by low pressure chemical vapour deposition (LPCVD), and the influence of a rotational precursor gas supply on coating microstructure was studied. The TiAlN characterized using X-ray diffraction (XRD), scanning transmission electron microscopy (SEM TEM), backscattered (EBSD). It is shown that induces an oscillatory surface reacti...

Journal: :IEEJ Transactions on Sensors and Micromachines 1996

Journal: :Le Journal de Physique Colloques 1989

1996
Matthias K. Gobbert Christian A. Ringhofer Timothy S. Cale

This paper discusses a model designed to deal with pattern dependencies of deposition processes. It is a mesoscopic scale model in the sense that it deals with spatial scales on the order of 10 ?3 m to 10 ?2 m, which is intermediate between reactor scale and feature scale. This model accounts for the eeects of the microscopic surface structure via suitable averages obtained by a homog-enization...

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