GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-μm MESFET had a saturation drain current of 238 mA/mm after Si3N4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 6...

A transistor parameter extraction method is presented where the device heating during the measurement is taken into account. The method utilizes an electrothermal transistor model including thermal feedback, as well as a proper model for the heat diffusion from the active region of the transistor. Here a simple but physically justified model for the thermal spreading impedance of the transistor...

Analytical results have been presented for an optically illuminated InGaAs MESFET with opaque gate. The excess carriers due to photo generation are obtained by solving the continuity equation. The energy levels are modified due to generation of carriers. The results of I–V characteristics under dark condition and under illumination have been compared and contrasted with the GaAs MESFET.

Agrowing number of semiconductor technologies are being applied to RF power transistor applications. These technologies include Si LDMOS FET, SiGe HBT, InGaP HBT, GaAs MESFET, AlGaAs pHEMT, SiC MESFET and AlGaN/GaN HEMT. The dependencies of linearity and efficiency of such technologies are often common, such as transconductance derivatives, capacitance variations, breakdown effects and parasiti...

The mesh size convergence rate of the finite element method in two-dimensional GaAs MESFET simulation has been investigated numerically. The equations governing MESFET operation and the finite element formulation of these equations are summarized. The presence of corner singularities at the gate contact endpoints is noteworthy. for such singularities are known to determine the convergence rate ...

This study examines the effect of library instruction on two sections of the same senior-level electrical engineering course in analog integrated circuit design. One section received a onehour library instruction session while the other section did not. The premise of the study is that inclusion of library instruction will result in higher utilization of scholarly resources in the students’ fin...