نتایج جستجو برای: metalorganic
تعداد نتایج: 1143 فیلتر نتایج به سال:
CeO2/La2Zr2O7/Ni piled-up structure is a very promising architecture for YBa2Cu3O7 (YBCO) coated conductors. We have grown YBCO/CeO2/ LZO/Ni epitaxial structures by metalorganic decomposition (MOD) and metalorganic chemical vapour deposition (MOCVD) methods. The crystallographic quality of the CeO2 layer is not well determined by conventional X-Ray Diffraction (XRD) due to the superposition of ...
In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...
The microstructure of nominally undoped epitaxial wurtzite-structure o-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped a-GaN films have an ordered point-defect structure. A model of this ...
Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. By carefully optimizing the growth conditions in the final stage of the process, excellent surface morphologies could be obtained at still acceptably high growth rates. Up t...
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