There is a huge development in mobile communications in Europe and consequently, the need for training engineering students in microwave design is growing. We present here some students projects aimed at designing microwave subsystems in MMIC and HMIC technology, for different wireless communications applications. They have been performed at LHOG/ENSERG (INPG), France. The capabilities and cons...

Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which influences such a large range of frequencies that they are not well characterized by large-signal or pulse measurements alone. Correlation of the model with smallsignal characteristics demonstrates th...

This paper is focused on the creation of an efficient electromagnetic model of MEMS switches which operates at microwave frequencies. The switches are first characterized using a full wave analysis based on a finite element method to extract the S-parameters of the switches for different geometrical dimensions. From the S-parameter database, a scalable lumped circuit model is extracted to allow...

0 1 5 Frequency [GHz] 6 2 3 4 Abstract The validity of lumped element microwave class-F amplifier circuit design has been demonstrated experimentally. By means of the proposed class-F amplifier design method, more than 4th-order higher harmonic frequencies can be taken into account in class-F microwave amplifier design using only lumped element components. In this approach, miniaturization of c...

A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT’s. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and loadpull characterization, and investigate parameter-spreads due to fabrication process variations....

An expression is derived for the perturbative response of a lumped resonance circuit to a sudden change in the circuit parameters. This expression is shown to describe also the photo-induced conductivity of a semiconductor mounted in a single-mode microwave cavity. The power dissipated in the cavity is measured in the two dimensions corresponding to time (after photo-excitation of the sample) a...