ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...

Metal-doped ZnO [MZO] thin films show changes of the following properties by a dopant. First, group III element (Al, In, Ga)-doped ZnO thin films have a high conductivity having an n-type semiconductor characteristic. Second, group I element (Li, Na, K)-doped ZnO thin films have high resistivity due to a dopant that accepts a carrier. The metal-doped ZnO (M = Li, Ag) films were prepared by radi...

Gallium doped zinc oxide (GZO) thin films have been prepared by a simple sol–gel spin coating technique. XRD results showed the preferential c-axis orientation of the crystallites and the presence of the wurtzite phase of ZnO. A lowest resistivity of 3.3 × 10−3 cm was obtained for the ZnO film doped with 2 at% of Ga after post-annealing at 500 ◦C for 45 min in a H2 atmosphere. All the films sho...

We report the synthesis of oriented single crystalline Mn doped ZnO nanowires through a hydrothermal method. Structural characterizations using X-ray diffraction and transmission electron microscopy revealed that the Mn was doped into the lattice structure, forming solid solution. The Mn doped ZnO nanowires possess wurtzite structure with a c-axis growth orientation. The physical properties of ...

ZnO nanorods (NRs) arrays doped with a large concentration of Mn synthesized by aqueous chemical growth and were characterized by SEM, photoluminescence, Raman scattering, magnetic force microscopy (MFM). By comparison of spectra taken on pure and Mn-doped ZnO NRs, a few new Raman impurity-related phonon modes, resulting from the presence of Mn in the investigated samples. We also present a vib...

Doped ZnO layers deposited by Low Pressure Chemical Vapour Deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells. The effect of a variation in the doping level of the front LP-CVD ZnO on solar cell performance is investigated. Based on these experimental results, authors propose to evaluate the effect of the different ZnO layer prop...

The group-III elements, such as Al, Ga and In, are possible dopants for ZnO to improve the electric conductivity of ZnO thin film. Since Ga has lower cost than In and has higher oxidation resistance than Al, it becomes the preferred dopants for ZnO thin film for transparent conducting oxide (TCO) application. In the research, we used MOCVD method with Ga doping to prepare the Ga-doped ZnO thin ...

The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The res...

For colloidal semiconductor nanocrystals (NCs), shape control and doping as two widely applied strategies are crucial for enhancing and manipulating their functional properties. Here we report a facile and green synthetic approach for high-quality colloidal Mn doped ZnO NCs with simultaneous control over composition, shape and optical properties. Specifically, the shape of doped ZnO NCs can be ...

Dye-sensitized solar cells (DSSCs) were fabricated by using well-crystallized ZnO nanocombs directly grown onto the fluorine-doped tin oxide (FTO) via noncatalytic thermal evaporation process. The thin films of as-grown ZnO nanocombs were used as photoanode materials to fabricate the DSSCs, which exhibited an overall light to electricity conversion efficiency of 0.68% with a fill factor of 34%,...