نتایج جستجو برای: mo contact

تعداد نتایج: 192902  

Journal: :Izvestiya Vuzov. Poroshkovaya Metallurgiya i Funktsional’nye Pokrytiya (Proceedings of Higher Schools. Powder Metallurgy аnd Functional Coatings) 2015

Journal: :Metals 2021

Tribological properties of lithium potassium titanate (PT), molybdenum disulphide, and tungsten disulphide-dispersed mineral oil (MO) were investigated. The sample containing 2 wt.% WS2 exhibited the lowest coefficient friction. However, wear scar diameters additivated samples very narrow. Extreme pressure enhanced with addition additives. rolling contact fatigue results better life balls in Mo...

2007
K. J. Wahl

Thin solid lubricating coatings of Pb-Mo-S were deposited on steel substrates via ion-beam deposition. Coating endurance and friction coefficients under dry air sliding conditions were monitored with ball-on-disk tests; additional tribological testing was performed using a ball-on-flat reciprocating test rig to investigate intermediate sliding distances (100-32000 cycles). Rutherford backscatte...

Journal: :Acta odontologica latinoamericana : AOL 2008
Sandra B Pérez Denise P Tejerina Romina I Pérez Tito Florencia L Bozza Andrea E Kaplan Susana L Molgatini

The aim of this study was to evaluate in vitro the duration of the antimicrobial effect of endodontic sealers by means of the Direct Contact Test. The sealers tested were: Endomethasone - Septodont, Endomethasone C-Septodont, Endion-Voco, Diaket-ESPE, Pulp Canal Sealer-SybronEndo, and AH26-Dentsply DeTrey. The endodontopathic microorganisms (MO) confronted were: Staphylococcus aureus (Sa), Cand...

Journal: :Journal of Materials Engineering and Performance 2021

Abstract Modifying MoS 2 thin films by additional elements shows great potential in order to adjust the property profile and meet increasing requirements regarding high wear resistance low friction properties of industrial components. Within that context, x :N:Mo were deposited a reactive hybrid dcMS/HiPIMS process. By systematically Mo target cathode power, an investigation structural mechanic...

Journal: :Nano letters 2014
Cheng Gong Luigi Colombo Robert M Wallace Kyeongjae Cho

Density functional theory calculations are performed to unravel the nature of the contact between metal electrodes and monolayer MoS2. Schottky barriers are shown to be present for a variety of metals with the work functions spanning over 4.2-6.1 eV. Except for the p-type Schottky contact with platinum, the Fermi levels in all of the studied metal-MoS2 complexes are situated above the midgap of...

2015
Alon Vardi Wenjie Lu Xin Zhao Jesús A. del Alamo

A novel contact-first approach for III–V FinFETs and trigate MOSFETs is presented. In this process, the metal contact is sputtered on the as-grown semiconductor heterostructure, and the contact metal is used as a part of the fin dryetch mask. We demonstrate this technique in Mo/n+-InGaAs contact structures with fin widths in the range of 50 to 300 nm. We have measured contact resistance in the ...

2012
Brandt P Groh Nicholas J Ahn

Methods Children evaluated in the pediatric rheumatology clinics of Penn State Children’s Hospital and diagnosed with Lyme arthritis between 2002 and 2010 were reviewed from initial contact to the most recent follow-up documentation available. The diagnosis of Lyme arthritis in all cases was based on the presentation of synovitis and/ or enthesitis in combination with positive Western blot assa...

Journal: :Solar RRL 2022

Herein, a detailed study of the stability different ITO-based back-contact configurations (including bare ITO contacts and functionalized with nanometric Mo, MoSe2, MoS2 layers) under coevaporation processes developed for synthesis high-efficiency Cu(In,Ga)Se2 (CIGSe) solar cells is reported. The results show that layers can be used as efficient back process temperatures 480 ºC. However, higher...

2000
Pushkar Ranade Yee-Chia Yeo Qiang Lu Hideki Takeuchi Tsu-Jae King Chenming Hu

Molybdenum has several properties that make it attractive as a CMOS gate electrode material. The high melting point (~2610°C) and low coefficient of thermal expansion (5×10/ oC, at 20 oC) are well suited to withstand the thermal processing budgets normally encountered in a CMOS fabrication process. Mo is among the most conductive refractory metals and provides a significant reduction in gate re...

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