نتایج جستجو برای: monolithic microwave integrated circuit mmic

تعداد نتایج: 419474  

2010
Sam P. Nguyen Jackson Pang Loren P. Clare

A fully integrated, front-end Ka-band monolithic microwave integrated circuit (MMIC) was developed that houses an LNA (low noise amplifier) stage, a down-conversion stage, and output buffer amplifiers. The MMIC design employs a two-step quadrature down-conversion architecture, illustrated in the figure, which results in improved quality of the down-converted IF quadrature signals. This is due t...

1997
Nadine Guillemot B. Cabon A. Vilcot N. Corrao

There is a huge development in mobile communications in Europe and consequently, the need for training engineering students in microwave design is growing. We present here some students projects aimed at designing microwave subsystems in MMIC and HMIC technology, for different wireless communications applications. They have been performed at LHOG/ENSERG (INPG), France. The capabilities and cons...

Journal: :International Journal of Numerical Modelling-electronic Networks Devices and Fields 2021

Abstract This paper describes an air cavity quad‐flat no‐leads (QFN) over‐molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated 0.25 μm HEMT technology. The single stage QFN MMIC achieves a bandwidth of 0.03–2.6 GHz typical gain 11.5 dB and less than 1.5 noise figure. low amplifier (LNA) design is based on model conce...

2016
Zhenxiang Yi Xiaoping Liao

In this paper, a novel 3D model is proposed to describe the temperature distribution of the thermoelectric microwave power sensor. In this 3D model, the heat flux density decreases from the upper surface to the lower surface of the GaAs substrate while it was supposed to be a constant in the 2D model. The power sensor is fabricated by a GaAs monolithic microwave integrated circuit (MMIC) proces...

2001
Pengcheng Jia Angelos Alexanian

High power, broad bandwidth, high linearity, and low noise are among the most important features in amplifier design. The broad-band spatial power-combining technique addresses all these issues by combining the output power of a large quantity of microwave monolithic integrated circuit (MMIC) amplifiers in a broad-band coaxial waveguide environment, while maintaining good linearity and improvin...

2014
Kevin J. Wolf

CIV: N/A TSR: Yes, except N/A for MT, and ‘‘technology’’ for the ‘‘development’’ or ‘‘production’’ of: (a) Traveling Wave Tube Amplifiers described in 3A001.b.8, having operating frequencies exceeding 19 GHz; (b) solar cells, coverglass-interconnect-cells or covered-interconnect-cells (CIC) ‘‘assemblies,’’ solar arrays and/or solar panels described in 3A001.e.4; (c) Microwave ‘‘Monolithic Integ...

2008
Olof Bengtsson Dimitris Pavlidis Giorgi Aroshvili Sanghyun Seo

2008
RAIHAN RAFIQUE Raihan Rafique

The superconducting Monolithic Microwave Integrated Circuit (MMIC) is vital in all modern superconducting Rapid Single Flux Quantum (RSFQ) digital systems. Importance of microwave components comes from the fact that superconducting circuits operate with an ultra-wide band signal in the ultra-low dissipation environment. At a typical signal bandwidth of 300 GHz, even a 100μm superconducting wire...

Journal: :Engineering, Technology & Applied Science Research 2023

This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. is first NUDA of Darlington topology designed with 0.1µm GaAs pHEMT process a transition frequency fT 130GHz. Gate microstrip line sections, drain and active device sizes were to obtain high gain large bandwidth from Monolithic Microwave Integrated Circuit (MMIC...

2004
Frank Ellinger Corrado Carta Lucio Rodoni George von Büren D. Barras Martin L. Schmatz Heinz Jäckel

An ultra low power consuming low noise amplifier (LNA) at C-band with variable gain for adaptive antenna combining is presented in this paper. The microwave monolithic integrated circuit (MMIC) was fabricated using commercial 0.25 μm bipolar complementary metal oxide semiconductor (BiCMOS) technology. At 5.2 GHz, a supply voltage of 1.2 V and a current consumption of only 1 mA, a maximum gain o...

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