One century after the discovery of ferroelectricity, and two decades ferroelectric random access memories were first commercialized, this Special Issue Advanced Electronic Materials demonstrates that field ferroelectricity is in robust health. First, arises very different types material via mechanisms. Second, domains each type are liable to switch differently, for both intrinsic reasons (chemi...

Thermal and electrical control of magnetic anisotropy were investigated in flexible Fe81Ga19 (FeGa)/Polyvinylidene fluoride (PVDF) multiferroic heterostructures. Due to the large anisotropic thermal deformation of PVDF (α1 = -13 × 10(-6) K(-1) and α2 = -145 × 10(-6) K(-1)), the in-plane uniaxial magnetic anisotropy (UMA) of FeGa can be reoriented 90° by changing the temperature across 295 K whe...

The interaction of coexisting structural instabilities in multiferroic materials gives rise to intriguing coupling phenomena and extraordinarily rich phase diagrams, both in bulk materials and strained thin films. Here we investigate the multiferroic BiMnO3 with its peculiar 6s2 electrons and four interacting mechanisms: electric polarity, octahedra tilts, magnetism, and cooperative Jahn-Teller...

The current communication signifies the effect of oxygen vacancies (OVs) both qualitatively and quantitatively in multiferroic BiFe0.83Ni0.17O3 by an in-depth atomic-level investigation of its electronic structure and magnetization properties, and these materials have a variety of applications in spintronics, optoelectronics, sensors and solar energy devices. Depending on the precise location o...

Multiferroics, materials where spontaneous long-range magnetic and dipolar orders coexist, represent an attractive class of compounds, which combine rich and fascinating fundamental physics with a technologically appealing potential for applications in the general area of spintronics. Ab-initio calculations have significantly contributed to recent progress in this area, by elucidating different...

To advance with creation of novel nano-electronic devices there is a need to understand electrons behavior in a wide range of materials with dimensions reduced down to nanometer scale. It is an important task for industries dealing with magnetic memories [1], light-emitting, photovoltaic or multiferroic devices [2]. A key role for development of such devices is the nanoscale characterization of...

Title of Dissertation: GROWTH AND CHARACTERIZATION OF MULTIFERROIC BATIO3-COFE2O4 THIN FILM NANOSTRUCTURES Haimei Zheng, Doctor of Philosophy, 2004 Dissertation Directed By: Professor Lourdes Salamanca-Riba Professor Ramamoorthy Ramesh Department of Materials Science and Engineering Multiferroic materials which display simultaneous ferroelectricity and magnetism have been stimulating significan...