We report a new and general strategy for efficient injection of carriers in active nanophotonic devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire heterostructures. n-GaN/InGaN/p-GaN CSS nanowire structures were grown by metal-organic chemical vapor deposition. Electron microscopy images reveal that the CSS nanowires are defect-free single crystalline structur...

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25GPa we study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. We find that Si is a shal...

Cathodoluminescence (CL) spectra from silicon doped and undoped wurtzite n-type GaN have been measured in a SEM under a wide range of electron beam excitation conditions, which include accelerating voltage, beam current, magnification, beam diameter, and specimen temperature. The CL intensity dependence on excitation density was analyzed using a power-law model (I CL proportional, variant J m )...

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are ...

We have applied a low-energy positron beam and secondary ion mass spectrometry to study defects in homoepitaxial and heteroepitaxial GaN layers. Positron experiments reveal high concentrations of Ga vacancies in nominally undoped n-type GaN, where the conductivity is due to unintentional oxygen incorporation. Ga vacancies are observed in both homoepitaxial and heteroepitaxial layers, indicating...

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process....

We present a comprehensive first-principles investigation of arsenic incorporation in GaN. Incorporation of As on the N site, which has previously been implicitly assumed, is favorable only under n-type conditions in a Ga-rich environment. Less Ga-rich conditions, and particularly p-type doping, strongly favor incorporation of As on the Ga site, where it behaves as a deep double donor. Arsenic ...

GaN Schottky barrier ultraviolet photodetectors with unintentionally doped and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality films on the Si substrate both have a fairly low dislocation density point defect concentration. More importantly, effect of doping performance GaN-on-Si photodetector was studied. It found that light in layer can s...