نتایج جستجو برای: oxide dispersion

تعداد نتایج: 236449  

A. Kodge A. Lagashetty, S. Kalyane

Nanosized metal oxides dispersed polymer composites constitute a fascinating class of polymer composite materials. Synthesis of such composite materials through solvent casting enhances the polymer synthetic technology. Solvent casting method was used to prepare Cobalt oxide (Co3O4) dispersed Poly (methyl methacrylate) (PMMA) nano composite<span style="text-decoration: und...

Background & Aim: In mammography absorbed dose is insignificant. Biologically, in normal people, the phenomenon of hypersensitivity to low doses occurs. The purpose of this study was to investigate the synergistic of Single-Walled Carbon Nanotube (SWCNT) in the polymer substrate of Poly Dimethyl Siloxane (PDMS) in common energy in mammography. Materials & Methods: Cerium oxide nanoparticles an...

2007
Valery I. Levitas Michelle L. Pantoya

A new mechanism for fast reaction of Al nanoparticles covered by a thin oxide shell during fast heating is proposed and justified theoretically and experimentally. For nanoparticles, the melting of Al occurs before oxide fracture. The volume change due to melting induces pressures of 1–2 GPa and causes dynamic spallation of the shell. The unbalanced pressure between the Al core and the exposed ...

A. Kodge A. Lagashetty, S. Kalyane

Nanosized metal oxides dispersed polymer composites constitute a fascinating class of polymer composite materials. Synthesis of such composite materials through solvent casting enhances the polymer synthetic technology. Solvent casting method was used to prepare Cobalt oxide (Co3O4) dispersed Poly (methyl methacrylate) (PMMA) nano composite<span style="text-decoration: und...

2014
X. Sun O. I. Saadat K. S. Chang-Liao T. Palacios S. Cui T. P. Ma

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

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