نتایج جستجو برای: oxynitride thin films
تعداد نتایج: 181302 فیلتر نتایج به سال:
Zinc Oxide (ZnO) nanorods and titanium dioxide (TiO2) nanostructures thin films were prepared onto glass substrates by the chemical bath deposition (CBD) method. The ZnO was structured as nanorods (NRs) while TiO2 was formed as nanoflowers plate as confirmed by Field-Emission Scanning Electron Microscope (FESEM) images. The ZnO/Fe3O4 and TiO2/Fe3O4 nanostructures thin films were prepared v...
The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 C in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current–voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growin...
The possibility to tune the elemental composition and structure of binary Me oxynitride-type compounds (Me1Me2ON) could lead attractive properties for several applications. For this work, tantalum-titanium oxynitride (TaTiON) thin films were deposited by DC reactive magnetron co-sputtering, with a –50 V bias voltage applied substrate holder constant temperature 100 °C. To increase or decrease i...
In this research, MgF2-2%SiO2/MgF2 thin films were applied on a glass substrate. At first, MgF2 thin films with the optical thickness were deposited on the glass slide substrates. Then, MgF2-2%SiO2 thin films were deposited on the glass coated with MgF2 thin films. Finally, the nanocomposite thin films were surface treated by the PFTS solution. Characterization of the thin film was done by X-Ra...
ZnO and Cu doped[1] (CZO) thin films were prepared by radio frequency sputtering. The structural and optical properties of thin films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), optical spectrophotometer, and photoluminescence (PL) techniques. ZnO thin films showed crystalline and micro-stress defects in the crystal lattice. Annealing of CZO thin films increa...
The interaction of nitric ~NO! and nitrous (N2O! oxide with ultrathin ~;1.5–3.5 nm! oxide and oxynitride films on silicon has been studied by performing high resolution depth profiling using medium energy ion scattering and isotopic labeling methods. We observe that, after NO annealing at 850 °C, both O and N incorporate near the SiO2/Si interface. There is no nitrogen and little newly incorpor...
Interaction between 5 lm thick copper and 50 nm thin titanium films was investigated as a function of annealing temperature and time using MeV He Rutherford backscattering, X-ray diffraction and dynamic Secondary Ion Mass Spectrometry. Samples were made by depositing 10 nm of titanium on a PECVD silicon oxynitride, followed by 50 nm of titanium nitride and 50 nm of titanium in the said order. I...
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