نتایج جستجو برای: phase change materials pcm
تعداد نتایج: 1542353 فیلتر نتایج به سال:
This study shows results of the experimental investigation of regularly structured Composite Latent Heat Storages. Common solid-liquid Phase Change Materials used as latent heat storages have a low thermal conductivity, which leads to high temperature differences inside large PCM volumes. This drawback is compensated by the combination with specially designed frame-structures made of aluminum t...
This research aimed to evaluate the thermal properties of new formulations of phase change materials (PCMs)-epoxy composites, containing a thickening agent and a thermally conductive phase. The composite specimens produced consisted of composites fabricated using (a) inorganic PCMs (hydrated salts), epoxy resins and aluminum particulates or (b) organic PCM (paraffin), epoxy resins, and copper p...
Excessive cracking can be a serious durability problem for reinforced concrete structures. In recent years, addition of microencapsulated phase change materials (PCMs) to concrete has been proposed as a possible solution to crack formation related to temperature gradients. However, the addition of PCM microcapsules to cementitious materials can have some drawbacks, mainly related to strength re...
انرژی مورد نیاز بشر به طور عمده از سوخت های فسیلی تأمین می شود. در حال حاضر حدود 80% کل انرژی مصرفی جهان را سوخت های فسیلی تشکیل می دهند. سوخت های فسیلی از نظر جغرافیایی بسیار محدود بوده، اکتشاف، استخراج، انتقال، فرآوری و مصرف آنها بسیار پر هزینه می باشد و در کلیه این مراحل لطمات جدی به محیط زیست وارد خواهد شد؛ لذا استفاده از انرژی خورشید به عنوان یک منبع تجدید پذیر انرژی مورد توجه قرار گرفته ا...
The idea to use phase change materials (PCM) for the purpose of storing thermal energy is to make use of the latent heat of a phase change, usually between the solid and the liquid state. Since a phase change involves a large amount of latent energy at small temperature changes, PCMs are used for temperature stabilization and for storing heat with large energy densities in combination with rath...
Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. Howeve...
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