نتایج جستجو برای: physical vapor deposition

تعداد نتایج: 775081  

2016
P. Richard G. Gremaud J. Thomas A. Kulik W. Benoit

Four thin-film adhesion characterization methods are proposed. Two of them are surface acoustic wave based and the two others emphasize the complementary nature between acoustic microscopy, scratch test and tensile experiments. A continuous wave scanning acoustic microscope was used to propagate surface modes in the specimen and to measure the surface acoustic wave velocity as a function of the...

2014
R. F. Bunshah D. L. Douglass

This investigation consisted of two parts. In part one, a High Rate Physical Vapor Deposition Process was developed for the deposition of metals, alloys, compounds and dispersion strengthened alloys. The relationship between the deposition temperature, the microstructure and the mechanical properties was studied. The materials resulting from this process were shown to have oroperties very simil...

2015
Qinke Wu Seong Jun Jung Sungkyu Jang Joohyun Lee Insu Jeon Hwansoo Suh Yong Ho Kim Young Hee Lee Sungjoo Lee Young Jae Song

Conditions for Reciprocal CVD Figure S1. Conditions used for graphene growth. (a) Temperature profile and flow parameters during the growth of epitaxial multilayer or poly-crystalline bilayer graphene. (b) Table listing the growth conditions used to prepare the graphene/h-BN heterostructure and the multilayer graphene.

Journal: :Journal of Vacuum Science and Technology 1975

2005
M. Gruber

In planar-integrated free-space optics (PIFSO) [1] the systems approach of which is shown schematically in Abb.1 signals may have to bounce up and down a considerable number of times inside a planar transparent substrate to reach their destinations. To obtain a high coupling efficiency it is therefore mandatory to cover the optical elements with a high-reflectance coating. Thin metal films are ...

2009
R. I. Badran F. S. Al-Hazmi S. Al-Heniti A. A. Al-Ghamdi J. Li S. Xiong

Two sets of hydrogenated microcrystalline silicon thin-film samples were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at different deposition conditions of excited power and pressure. The correlation between the crystalline volume fraction for the samples determined from Raman spectra and the excited power, pressure, absorption coefficient, refractive index and optica...

1998
A. P. Burden S. R. P. Silva

The simultaneous generation of dust during the deposition of semiconducting thin films by radio frequency plasma enhanced chemical vapor deposition has so far been regarded as a troublesome by-product. However, we present results from recent microstructural investigations of carbonaceous dust particles from a methane precursor that demonstrate that the technique may be suited to generating full...

2007
H. Xia Y. S. Meng L. Lu G. Ceder

Electrochemical Properties of Nonstoichiometric LiNi0.5Mn1.5O4− Thin-Film Electrodes Prepared by Pulsed Laser Deposition H. Xia, Y. S. Meng,* L. Lu, and G. Ceder* Advanced Materials for Microand Nano-System, Singapore-MIT Alliance, Singapore 117576, Singapore Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Department of...

Journal: :The European Physical Journal Applied Physics 2011

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