The constant pace of CMOS technology scaling has enabled continuous improvement in integrated-circuit cost and functionality, generating a new paradigm shift towards mobile computing. However, as the MOSFET dimensions are scaled below 30nm, electrostatic integrity and device variability become harder to control, degrading circuit performance. In order to overcome these issues, device engineers ...

The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt hetero...

Optically resonant dielectric metasurfaces offer unique capability to fully control the wavefront, polarization, intensity, or spectral content of light based on excitation and interference different electric magnetic Mie multipolar resonances. Recent advances wide accessibility in nanofabrication nanotechnologies have led a surge research field high-quality functional optical metasurfaces, whi...

We give a short proof of the following theorem due to Borodin [2]. Every planar graph with maximum degree ∆ ≥ 9 is (∆ + 1)-edge-choosable. Key-words: edge-colouring, list colouring, List Colouring Conjecture, planar graphs This work was partially supported by the INRIA associated team EWIN between Mascotte and ParGO. in ria -0 04 32 38 9, v er si on 1 16 N ov 2 00 9 Les graphes planaires de deg...

GeSi nanoislands grown on nanotip pre-patterned Si substrates at various temperatures are investigated. Nanoislands with a high density and narrow size distribution can be obtained within an intermediate temperature range, and the Ge atom diffusion length is comparable to half of the average distance of the Si nanotips. The Ge concentration distributions at the center and edge of the GeSi nanoi...

We analytically investigate the light trapping performance in plasmonic solar cells with Si/metallic structures. We consider absorption enhancements for surface plasmon polaritons (SPPs) at planar Si/metal interfaces and localized surface plasmon resonances (LSPRs) for metallic spheres in a Si matrix. We discover that the enhancement factors at Si/metal interfaces are not bound to the conventio...

Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is de...

In the title compound, [Pt(C(37)H(55)P(2)Si)Cl], prepared from MeSiH[(cy)(2)PC(6)H(4)](2) and [Pt(cod)Cl(2)] (cy = cyclo-hexyl; cod = cyclo-octa-1,5-diene), the Pt(II) atom is coordinated by two P atoms, one Si atom and one Cl atom in a distorted square-planar geometry. The two P atoms are in a trans arrangement and the four cyclo-hexane rings adopt a chair conformation.

In contrast to the tetrachlorodigermane (tBu3Si)Cl2Ge-GeCl2(SitBu3), the cis,transcyclotrigermane (tBu3SiGeCl)3is sensitive to oxygen. Its treatment with O2 at ambient temperature leads to the trigermoxetane (tBu3Si)3Ge3Cl3O. According to an X-ray structure analysis of single crystals consisting of cocrystallized (tBu3Si)3Ge3Cl3O and (tBu3Si)Cl2Ge-GeCl2(SitBu3) the trigermaoxetane contains an a...