نتایج جستجو برای: plasma enhanced atomic layer deposition
تعداد نتایج: 1089423 فیلتر نتایج به سال:
This communication reports an approach based on plasma-enhanced atomic layer deposition of aluminium oxide for the functionalization of polytetrafluoroethylene (PTFE or "Teflon") surfaces. Alternating exposure of PTFE to oxygen plasma and trimethylaluminium causes a permanent hydrophilic effect, and a more than 10-fold improvement of the "glueability" of PTFE to aluminium.
Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon SiO2/Si substrates. The crystal structure, chemical composition, morphology characterized grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), force microscopy (AFM) techniques, respectively. It was found that mec...
Tungsten oxide–silicon dioxide (WOx–SiOy) composite thin films were deposited for the first time via remote oxygen plasma-enhanced atomic layer deposition (ALD) process using a novel metal-organic heteronuclear and heteroleptic precursor, bis(tert-butylimido)bis(trimethylsilylmethyl)tungsten. Self-limiting ALD growth was demonstrated over wide temperature window of 203–328 °C with per cycle dec...
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