This paper presents the analysis, design, fabrication, and testing of a condenser microphone utilizing a thin low-stress polycrystalline silicon diaphragm suspended above a p+ perforated back plate. The microphone is fabricated using a combination of surface and bulk micromachining techniques in a single wafer process without the need of wafer bonding. The device shows sensitivities of -34 dB (...

Ion implantation, followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the subthreshold behavior based on results o...

The single-polysilicon non-self-aligned bipolar transistor in a 0.5-pm BiCMOS technology bas been converted into a double-polysilicon emitter-base self-aligned bipolar transistor with little increase in process complexity. Improved bipolar performance in the form of smaller base resistance and base-collector capacitance, larger knee current, higher peak cutoff frequency, and shorter ECL gate de...

In this article, the authors show that geometric asymmetry in the layout of tunnel diodes yields asymmetry in the current-voltage I-V relationships associated with these diodes. Asymmetry improves diode performance. This effect is demonstrated for polysilicon–SiO2–Ti /Au and for Ni–NiO–Ni tunneling structures. For a polysilicon–SiO2–Ti /Au asymmetric tunneling diode ATD , sensitivity and I-V cu...

This letter presents an ultrathin textured polycrystalline oxide (polyoxide) ( ~100 A) prepared by thermal oxidation of thin polycrystalline silicon (polysilicon) film on n+ polysilicon. The presented textured polyoxide exhibits a much higher electron injection efficiency, a much smaller electron trapping rate, and a much larger charge to breakdown than the normal polyoxide. The value of Qhd of...

-------------------------------------------------------ABSTRACT--------------------------------------------------In this Paper an On chip High Voltage Generator with bulk CMOS process using Polysilicon Diodes is presented. As the polysilicon diodes are completely isolated from the bulk so the output voltage is not limited by the junction breakdown voltage of CMOS in charge pump circuit. The out...

We present a two-dimensional simulation model for dopant diffusion in polysilicon, which includes dopant clustering in grain interiors as well as in grain boundaries. The grain growth model is coupled with the diffusion coefficient of the dopants and the process temperature. For all high dose implantation cases the trapping/emission mechanism in polysilicon and the grain growth are the major ef...

A polysilicon transistor based active matrix organic light emitting diode (AMOLED) pixel with high pixel to pixel luminance uniformity is reported. The new pixel powers the OLEDs with small constant currents to ensure consistent brightness and extended life. Excellent pixel to pixel current drive uniformity is obtained despite the threshold voltage variation inherent in polysilicon transistors....