The silicon photonics field is advancing rapidly, with many new devices demonstrated recently [1]. Demonstrations have shown significantly improved performance that is now approaching that of devices on native InP substrates. In addition to the many passive devices, including AWGs, isolators, and circulators, active devices including lasers, modulators, amplifiers and photodetectors (Fig. 1) ar...

Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...

We present an experimental study on a terahertz quantum cascade laser (THz QCL) design that combines both two-well injector and direct-phonon scattering schemes, i.e., so-called design. As result of the scheme presented here, lasers benefit from direct phonon for lower level depopulation setback doping profile reduces overlap doped region with active states. Additionally, our also has efficient...

Introduction: It has been predicted that the threshold current density of quantum dot lasers should be lower than that of quantum well lasers due to the reduction of density of states [1]. In particular, efforts have been made in the past few years to reduce the threshold current density of quantum dot lasers on GaAs substrates [2, 3]. A recently developed approach is to put the InAs dots in a ...

This paper discusses the concept of enhancing semiconductor laser performance through tailoring of scattering rates of confined polar-optical phonons. Studies of optically pumped intersubband scattering in coupled quantum-well lasers have demonstrated that interface-phonon-assisted transitions are important in such structures; furthermore, simple analytical expressions have been derived that in...