We introduce the autozeroing floating-gate (AFGA) secondorder section. We built this second-order filter where the corner frequency and are electronically tunable based on a classic filter topology and principles of operational transconductance amplifiers. We built this secondorder filter using three AFGAs—our floating-gate amplifier that sets its operating point by the interaction of hot-elect...

In this paper we present a floating-Gate differential amplifier input stage with tunable gain. The input stage can be used in a differential ultra lowvoltage (ULV) floating gate (FG) transconductance amplifier. Measured data for the subcircuits operating at 0.8V, 0.5V and 0.3V are provided.

For digital circuits with ultra-low power consumption, floating-gate circuits have been considered to be a technique potentially better than standard static CMOS circuits. By having a DC offset on the floating gates, the effective threshold voltage of the floating-gate transistor is adjusted and the speed and power performance can be altered. In this paper the basic performance related properti...

The High-K Metal Gate (HKMG) technology has become the keystone to reduce gate leakage and enable the continuous scaling of transistors towards 32nm node and beyond. However, the reduction of gate leakage in 32nm HKMG PD (Partially Depleted)-SOI (Silicon-On-Insulator) CMOS (Complementary Metal–Oxide–Semiconductor) inevitably changes the modeling methods for gate current, floating body effect, a...

We address disturbs due to gate oxide and junction leakage currents in floating gate nonvolatile memories (NVM). The junction leakage is important, because the gate oxide current is proportional to junction current. We find the low gate leakage current to be caused by field ionization (FI) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge accumulati...

We have developed a bandpass floating-gate amplifier that uses tunneling and pFET hot-electron injection to set its dc operating point adaptively. Because the hot-electron injection is an inherent part of the pFET’s behavior, we obtain this adaptation with no additional circuitry. Because the gate currents are small, the circuit exhibits a high-pass characteristic with a cutoff frequency less t...

A log-domain current-mode true RMS-to-DC converter based on a novel synthesis of a simplified current-mode low pass filter and a two-quadrant squarer/divider is presented. The circuit employs floating gate MOS (FG-MOS) transistors operating in weak inversion region. The converter features low power(

A modeling approach to study advanced floating body Z-RAM memory cells is developed. In particular, the scalability of the cells is investigated. First, a Z-RAM cell based on a 50 nm gate length double-gate structure corresponding to state of the art technology is studied. A bi-stable behavior essential for Z-RAM operation is observed even in fully depleted structures. It is demonstrated that b...