Disordered fcc ~face-centered-cubic! @100# fiber-textured CoPt thin films with thicknesses of 20–40 nm were deposited on a nonmagnetic sputtered MgO seed layer with and without a Ag intermediate layer. These were subsequently annealed at 600–750 °C for 5–10 min using rapid thermal annealing ~RTA!. The structural variants were determined to coexist in the in-plane and normal to the plane directi...

Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...

Bilayer Mg/Co thin films prepared using thermal evaporation method at pressure 10 – 5 torr at room temperature. The films were rapid thermal annealed (RTA) using halogen lamp for different times to get a homogeneous structure of Mg/Co thin films. The hydrogen gas was introduced in hydrogen chamber, where samples were kept at different pressure of H2 for thirty minutes. The UV–VIS transmission s...

The effects of different rapid thermal annealing temperatures on the optical properties of InAs double quantum dots (DQDs) grown by molecular beam epitaxy using a partial-capping-and-regrowth process have been investigated. Improvement of the material quality is indicated by enhanced photoluminescence (PL) intensity and narrower PL linewidth. The blueshift of the PL emission peak with increasin...