نتایج جستجو برای: resistive switching
تعداد نتایج: 80099 فیلتر نتایج به سال:
0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.11.009 ⇑ Corresponding authors. Tel.: +1 412 648 8989. E-mail addresses: [email protected] (M. Yun), We report the fabrication of resistive random access memory (ReRAM) on both Si and PET flexible substrates using TiO2 as the dielectric spacer between Ag electrodes. Ag/TiO2/Ag ReRAM shows unipolar switching...
Submitted for the MAR10 Meeting of The American Physical Society Novel Resistive Switching in MgO with Nitrogen Doping CHENGHAN YANG, Stanford University, XIN JIANG, MAHESH SAMANT, BRIAN HUGHES, LI GAO, ANDREW KELLOCK, STUART PARKIN, IBM Almaden Research Center — Resistive switching in oxide thin films has been extensively explored as a candidate for the next generation nonvolatile memory. The ...
The resistive switching characteristics of the Cu/SiO x /Pt structure (control sample) exhibited a direct correlation to humidity. The H2O vapor formed the Cu oxide at the Cu/SiO x interface, and Cu ions were injected from the Cu oxide into the SiO x layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environmen...
We demonstrate current self-complianced and self-rectifying bipolar resistive switching in an Ag-electroded Na-doped ZnO nanowire device. The resistive switching is controlled by the formation and rupture of an Ag nanoisland chain on the surface along the Na-doped ZnO nanowire. Na-doping plays important roles in both the self-compliance and self-rectifying properties.
Resistive switching (RS) and Resistive Random Access Memories (ReRAMs) that exploit it have attracted huge interests for next generation non volatile memory (NVM) applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the RS between two different resistive states, usually High (HRS, High res...
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxat...
Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief. Keywords—HfOx, resistive switching, RRAM.
A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.
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