Mg alloys have a vast usage where weight reduction is really significant since they do the features really well for materials of ultra-light weight. However, Mg is inherently a reactive metal and its alloys generally possess quite weak corrosion resistance that widely restricts their technological usages, especially in some rough service conditions. Despite, many investigations on the passive a...

The effects of H2SO4 concentration on the electrochemical behaviour of passive films formed on AISI 304 stainless steel were investigated using by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS). Potentiodynamic polarization indicated that the corrosion potentials were found to shift towards negative direction with an increase in solution co...

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a pro...

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type ...

Gallium Nitride (GaN) is a very promising material for either electronic and optoelectronic devices because of its high breakdown field, and peak and saturated electron drift velocity. Hence, despite of its lower electron mobility, GaN Schottky diodes might represent a good alternative to GaAs Schottky diodes for LO power generation at millimetre-wave bands due to a much better power handling c...

this paper focused on the characterization of electrochemical behavior of a martensitic stainless steel inthe acidic solutions. for this purpose, electrochemical parameters were derived from potentiodynamicpolarization, mott schottky analysis and electrochemical impedance spectroscopy (eis) techniques.the potentiodynamic polarization results showed that corrosion current density of aisi 420 sta...

In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifeti...

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-le...

in this paper, the electrochemical behaviour of passive films formed on aisi 321 stainless steel (aisi 321)immersed in 0.1 m naoh + 0.1 m koh solution was evaluated by different electrochemical techniques. forthis purpose, passive films were formed at open circuit potential for 1 to 12 hours and then electrochemicalmeasurements were done. the polarization curves suggested that aisi 321 showed e...

Following a brief historical overview on the origin and the evolution of Schottky noise we discuss applications in the field of beam diagnostics in particle accelerators. A very important aspect of Schottky diagnostics is the fact that it is a non perturbing method. Essentially statistics based, it permits to extract beam relevant information from rms (root mean square) noise related to the mov...