We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...

The efficiencies of open-air processed Cu2O/Zn(1-x)Mg(x)O heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn(1-x)Mg(x)O and the indium tin oxide (ITO) top contact. By depositing Zn(1-x)Mg(x)O with a long band-tail, charge flows through the Zn(1-x)Mg(x)O/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High curren...

In this study, the effect of molybdate on the electrochemical behavior and semi-conductive properties of duplex stainless steel 2205 passive film at NaCl solutions was investigated. Cyclic potentiodynamic polarization, impedance spectroscopy, mott-schottky plots and scanning electron microscopy (SEM) were used to study the passive behavior. Polarization curves showed that the corrosion current ...

Not all Schottky groups of Möbius transformations are classical Schottky groups. In this paper we show that all Fuchsian Schottky groups are classical Schottky groups, but not necessarily on the same set of generators. AMS Classification 20H10; 30F35, 30F40

This article studies the sub-linearity of output characteristics measured in Schottky-barrier metal-oxide-semiconductor field-effect transistors with simulations and experiments. It is shown that not due to forward-biased Schottky diode at drain contact interface but bias impact on source-side Schottky-barrier, resulting an increased carrier injection increasing drain–source voltage. The simula...

A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier heigh...

The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation...

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer leng...

Koebe’s Retrosection Theorem [8] states that every closed Riemann surface can be uniformized by a Schottky group. In [10] Marden showed that non-classical Schottky groups exist, and a first explicit example of a non-classical Schottky group was given by Yamamoto in [14]. Work on Schottky uniformizations of surfaces with certain symmetry has been done by people such as Hidalgo [7]. The natural q...