We disclose a supramolecular material that combines semiconducting and dipolar functionalities. The material consists of a discotic semiconducting carbonyl-bridged triarylamine core, which is surrounded by three dipolar amide groups. In thin films, the material self-organizes in a hexagonal columnar fashion through π-stacking of the molecular core and hydrogen bonding between the amide groups. ...

We demonstrate an alternative path for achieving high transconductance organic transistors in spite of relatively large source to drain distances. The improvement of the electronic characteristic of such a scheme is equivalent to a 60-fold increase in mobility of the underlying organic semiconductor. The method is based on percolating networks, which we create from a dispersion of individual si...

Our work in the last year focused on improving the sorting of semiconducting carbon nanotubes and the enhancement of the conductivity and transparency of carbon based electrodes. The active layer of our carbon solar cell is based on semiconducting single-walled carbon nanotubes; the highly selective sorting of small diameter carbon nanotube is essential for photovoltaic applications. Ideally, t...

The material systems include GaAs/AlGaAs semiconductor heterostructures, semiconducting nanowires and carbon nanotubes. These materials have their own advantages that can be employed to engineer a spin-friendly environment. These include fabrication and electrical-control issues as well as the strength of the hyperfine interaction (i.e. presence or absence of nuclear spins) and the spinorbit in...

We report on x-ray absorption studies of the structure of the liquid phase of a prototypical phase-change material Ge2Sb2Te5 . We demonstrate that the local structure of liquid Ge2Sb2Te5 is very similar to that of amorphous Ge2Sb2Te5 . Ge atoms in the liquid phase are found to be covalently bonded suggesting a semiconducting nature of the melt.

ZnO is the semiconducting material used in many applications under the opto-electrical properties. The characterization and the deposition of the Zinc Oxide thin film is performed using the sol gel method under different temperature values. The experimentation of the methodology is performed in this work. The result analysis of the work is been performed under XRD pattern at different temperatu...

A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.

The wide-bandgap semiconducting material, zinc sulfide, has been coated on indium phosphide nanoclusters to a 1-2-Å thickness. The resulting InP-ZnS core-shell particle (as shown in the TEM image; scale 1 cm=5 nm) exhibits bright luminescence at room temperature with quantum efficiencies as high as 23 %.