The absorption properties of charge transfer organic semiconductor TTF-TCNQ (tetrathiafulvalene-tetracyanoquhodimete ) filmsdeposited on KBr singlecrystal, quartz and glass substrates in far infrared have been investigated. An absorption edge at ?10 ??m was observed. Photoconductivity, photoconduction efficiency and gain and photocarrier's lifetime have been measured. The results show an el...

Guided by the results of our analyzing-power measurements for p+d elastic scattering at 200 and 120 MeV,' we have designed and constructed two proton polarimeters for the IUCF high-energy beamlines. Each polarimeter contains four pairs of scintillators, where each pair consists of a thin AE paddle for the proton operated in coincidence with a stopping scintillator for the deuteron. The recoil d...

A method of obtaining high sensitivity and precision in x-ray fluorescence analysis using semiconductor detector spectrometers is discussed. Monoenergetic exciting radiation is employed to generate characteristic x-rays from trace elements in thin, uniform specimens. Corrections for absorption effects are determined; enhancement effects are omitted as they are negligible for many thin specimens...

The first true coaxial 18–fold segmented n–type HPGe prototype detector produced by Canberra–France for the GERDA neutrinoless double beta-decay project was tested both at Canberra–France and at the Max–Planck–Institut für Physik in Munich. The main characteristics of the detector are given and measurements concerning detector properties are described. A novel method to establish contacts betwe...

Germanium orthogonal strip detectors have been produced using amorphous-semiconductor contacts. The amorphoussemiconductor contact fabrication process is relatively simple, and it is capable of producing fine-pitched electrode structures. The bipolar blocking behavior of the amorphoussemiconductor contact permits its use on both sides of a detector, replacing conventional B ion implanted and Li...

A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes w...

An implantable beta-radiation detector suitable for the measurement of reginal blood flow in the experimental animal by the indicator clearance principle is described. A lithium-drifted silicon diode encapsulated in a stainless steel case is sutured over the site of interest. A suitable beta-emitting isotope, such as 85Kr in saline solution, is injected into the arterial supply and its calibrat...

We report on a broadband GaAs/AlAs superlattice detector for THz radiation; a THz field reduces the current through a superlattice, which is carried by miniband electrons, due to modulation of the Bloch oscillations of the miniband electrons. We studied the detector response, by use of a free electron laser, in a large frequency range ~5–12 THz!. The responsivity showed strong minima at frequen...