In this paper, a distributed simulation-based computational intelligence algorithm for inverse problem of nanoscale semiconductor device is presented. This approach features a simulation-based optimization strategy, and mainly integrates the semiconductor process simulation, semiconductor device simulation, evolutionary strategy, and empirical knowledge on a distributed computing environment. F...

To further grasp the voltage-current characteristics for ignition device of semiconductor bridge and accordingly guide the actual application, the voltage-current characteristics for the bridge body of ignition device of semiconductor bridge are tested in the paper. Firstly, introduce the principle of SCB circuit and provide the connection circuit, device elements to be used and symbolic expres...

The emergence of ignition device of semiconductor bridge provides a way to resolve the conflict between low energy and high promptness, reliability and safety of initiating explosive device. But with the rapid development of arms and ammunition, the higher demand of miniaturization for structure and volume in design of initiating explosive device is put forward based on high safety, reliability...

In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good ...

In the paper, a new physical principle for designing of a new optoelectronic device and its theoretical description are presented. The basic idea of the device consists in providing inside a multilayered semiconductor structure such conditions for photoelectrons that enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around p-n junctions of a re...

This paper presents a device proposal based on a junction between an absorbing semiconductor nanorod structure and another window semiconductor layer for solar cell application. The possibility of band gap tuning by varying the diameter of the nanorods along the length, higher absorption coefficient at nanodimensions, the presence of a strong electrical field at the nanorod-window semiconductor...

This paper presents the variation law of temperature in three-dimensional space, which is cooled by the refrigeration provided by the cold side of a semiconductor. The mathematical model of the temperature field of the semiconductor refrigeration device is described, and a numerical study on the temperature profile in a semiconductor refrigeration device was carried out using this model. The pr...

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger t...