Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid micro-ring reso...

Superconductor–semiconductor–superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well future high-performance low power dissipating nanoelectronic and devices. In this work, ultrascaled monolithic Al–Ge–Al nanowire featuring monocrystalline Al leads abrupt metal–semiconductor interfaces used to probe the low-tempe...

In this paper we describe the tunneling junction model effect on silicon nanowire gate-allaround field effect transistor using CMOS 45 nm technology. Tunneling effects provides better subthreshold slope, excellent drain induced barrier lowering and superior ION-IOFF ratio.This paper demonstrates the gate controlled tunneling at source of Gate-all-around field effect transistor. Low leakage curr...

We present a quantum and classical theory of electronic devices with one–dimensional (1D) channels made of a single carbon nanotube or a semiconductor nanowire. An essential component of the device theory is a self–consistent model for electrostatics of 1D systems. It is demonstrated that specific screening properties of 1D wires result in a charge distribution in the channel different from tha...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

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