We present numerical simulations and measurements of shot noise in resonant tunneling structures. We show that when electron-electron interaction through Coulomb force and Pauli exclusion is properly taken into account, the main features of noise behavior of such devices can be correctly predicted. Electron-electron interaction is shown to be responsible for the suppression of shot noise in the...

We investigate the injection of degenerate Fermi-Dirac electrons into a multimode ballistic conductor under the space-charge-limited regime. The nonequilibrium current fluctuations were found to be suppressed by both Coulomb and Fermi correlations. We show that the Fermi shot-noise-suppression factor is limited below by the value 2kBT/«F , where T is the temperature and «F the Fermi energy of t...

Noise plays a uniquely informative role in connection with the particle-wave duality. It was Albert Einstein who first realized (in 1909) that electromagnetic fluctuations are different if the energy is carried by waves or by particles. The magnitude of energy fluctuations scales linearly with the mean energy for classical waves, but it scales with the square root of the mean energy for classic...

We study the transport properties of inertial Brownian particles which move in a symmetric periodic potential and are subjected to both a symmetric, unbiased time-periodic external force and a biased Poissonian white shot noise (of non-zero average F ) which is composed of a random sequence of δ-shaped pulses with random amplitudes. Upon varying the parameters of the white shot noise, one can c...

Shot-noise processes generalize compound Poisson processes in the following way: a jump (the shot) is followed by a decline (noise). This constitutes a useful model for insurance claims in many circumstances; claims due to natural disasters or self-exciting processes exhibit similar features. We give a general account of shot-noise processes with time-inhomogeneous drivers inspired by recent re...

We report measurements of current noise in single-layer and multilayer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multilayer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25...