INTRODUCTION In order to reduce source/drain resistance with shallower junction, self-aligned silicide(sa1icide) process was developed and is finding more applications to MOSFETs. Now, MOSFET process simulation including salicide process is a necessity. However, there have been few reports on salicide simulation mainly because the implement of 2D model is very difficult. We have developed a 2D ...

We demonstrate a simple but straightforward process for the synthesis of nanotube-type Si-based multicomponents by combining a coaxial electrospinning technique and subsequent metallothermic reduction reaction. Si-based multicomponent anodes consisting of Si, alumina and titanium silicide show several advantages for high-performance lithium-ion batteries. Alumina and titanium silicide, which ha...

A series of trilayers of sputtered Fe/Si/Fe were grown to study the interface characteristics and magnetic coupling between ferromagnetic Fe layers (30 Å thick) for Si spacer thickness (tSi) ranging from 15 Å to 40 Å. Grazing incidence x-ray diffraction, AFM, resistivity and x-ray photoelectron spectroscopy (XPS) measurements show substantial intermixing between the layers during deposition whi...

This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2. A 10nm HfO2 switching material and 50nm TiN top electrode was then deposited and etched into 500nm by 500nm square RRAM cells. Cell performance of the Ni2Si ...

electrical, structural and morphological properties of ni silicide films formed in ni(pt 4at.% )/si(100) and ni0.6si0.4(pt4at.% )/si(100) structures at various annealing temperatures ranging from 200 to 1000 oc were studied. the ni(pt) and ni0.6si0.4(pt) films with thickness of 15 and 25 nm were deposited by rf magnetron co-sputtering method, respectively.  the annealing process of the structur...

We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure at grain boundaries (GBs) in multicrystalline silicon. We analyze a solar cell with alternating mm-wide bare and SiN.,-coated stripes us ing laser-beam-i nduced current, electron backscatter diffraction, X-ray fluorescence microscopy, and defect etching to correlate preand post-hydrogenation rec...

In this paper we propose a silicide design consideration for electrostatic discharge (ESD) protection in nanoscale CMOS devices. According to our practical implementation, it is found that a comprehensive silicide optimization can be achieved on the gate, drain, and source sides with very few testkey designs. Our study shows that there is a high characteristic efficiency for various conditions;...

We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width...

Transition metal silicide is an important material used in microelectronic devices and a possible candidate for high temperature application. The objective of this study is trying to make use of this material in a new way as protective thin films on engineering materials. The brittle nature of the silicides can thus be compensated by the ductile bulk material and the surface corrosion resistanc...

The spreading of a bilayer gold film propagating outward from gold clusters, which are pinned to clean Si(111), is imaged in real time by low-energy electron microscopy. By monitoring the evolution of the boundary of the gold film at fixed temperature, a linear dependence of the spreading radius on time is found. The measured spreading velocities in the temperature range of 800 < T < 930 K vari...