We review the topic of scanning tunnelling microscopy (STM) studies of silicides, with an emphasis on fundamental scientific issues that can be addressed using STM and ballistic-electron-emission microscopy (BEEM). The discussion is organized according to the topics of structure (atomic scale precursors, surface reconstructions, bulk structures, interfaces) kinetics and growth (direct atomic me...

Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to 15nm. Complementary low-barrier silicides were used to reduce contact and series resistance. Minimum gate-length transistors with Tox=40Å show PMOS |Idsat|=270μA/μm and NMOS |Idsat|=190μA/μm with Vds=1.5V, |Vg-Vt|=1.2V and, Ion/Ioff>10 . A simple transmission model, fitted to experimental data, is used t...

As the minimum VLSl feature size continues to scale down to the 0.1-0.2-pm regime, the need for low-resistance local interconnections will become increasingly critical. Although reduction in the MOSFET channel length will remain the dominant factor in achieving higher circuit performance, existing local interconnection materials will impose greater than acceptable performance limitations. We re...

J. W. Cleary, R. E. Peale,* D. J. Shelton, G. D. Boreman, C. W. Smith, M. Ishigami, R. Soref, A. Drehman, and W. R. Buchwald Department of Physics, University of Central Florida, Orlando, Florida 32816, USA College of Optics (CREOL), University of Central Florida, Orlando, Florida 32816, USA Sensors Directorate, Air Force Research Laboratory, Hanscom Air Force Base, Massachusetts 01731, USA *Co...

In this review, we analyze the structure of multicomponent alloys without principal components (they are also called high entropy alloys—HEAs), containing not only metals but hydrogen, nitrogen, carbon, boron, or silicon. particular, discuss phenomenon grain boundary (GB) wetting by melt solid phase. The GB can be complete incomplete (partial). former case, grains matrix completely separated co...