Lequation de magneto transport relative aux porteurs minoritaires charge dans la base photopile au silicium a jonctions verticales series, est resolue, munie des conditions limites, definies par les vitesses recombinaison jonction et en face arriere. Le photocourant phototension sont determines, representes caracteristique courant-tension (Iph(Sf)-Vph(Sf)) sous eclairement monochromatique. mode...

Smoking induces inflammation and oxidative stress via radical production from chemicals resulting in cardiocerebrovascular respiratory diseases, cancers, stroke sudden death. Elements found tobacco plant smoke are absorbed into blood circulation transferred peripheral tissues. The aim of the present study is to evaluate alterations serum nickel (Ni), silicium (Si), arsenic (As) boron (B) levels...

Instruction Level Simulation has received big attention as it allows out-of-silicium test and hardware exploration. In this paper, we present GLISS2, the second release of a simulator generator based on the NML ADL. Thanks to the implementation of a set of optimization techniques (acceleration in memory emulation, caches for the decode step and blocking of instruction descriptors), we multiply ...

Spectral data obtained at ESO, Observatoire de Haute-Provence and with the IUE covering the 120 910 nm spectral range allowed us to determine the abundances of 21 elements in the atmosphere of themoderately fast rotatingHg-Mn star γ Corvi.We find that helium, carbon, nitrogen, magnesium, aluminium, silicium, sulfur, chromium, iron and nickel are underabundant with respect to solar values. Beryl...

Mesoporous layers of silica are of interest for many optical applications, including the creation of devices ranging from optical sensors to laser sources with promising characteristics. Their optical characterization goes through the interpretation of measurements. We propose to give experimental results of reflectance and scattering measurements concerning mesoporous layers of silica deposite...

T. Hadjersi, N. Gabouze , N. Yamamoto, K. Sakamaki, H. Takai, A. Ababou, and E.S. Kooij 1 Unité de Développement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 399 Alger-Gare, Alger, Algeria 2 Communications Research Laboratory, Basic and Advanced Research, Division, 4-2-1, Nukui-kitamachi, Koganei,Tokyo, 184-8795, Japan 3 Tokyo Denki University, Department of Electrical Engine...