We report on an implementation of a self-powered radio-frequency identification tag in a three-dimensional silicon on insulator (3D SOI) process, which uses backscatter modulation to send a hardwired digital code to a scanner.

We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring res...

We analyse the coupling of light between optical fibers and silicon waveguides in the Silicon-On-Insulator (SOI) platform. This platform, providing both high-index contrast and low optical absorption, along with CMOS compatibility, is the leading candidate for the realisation of integrated photonic circuits in silicon[1]. However one outstanding issue is how to couple light from a single-mode o...

We report an electrically pumped hybrid cavity AlGaInAs-silicon long-wavelength VCSEL using a high contrast grating (HCG) reflector on a silicon-on-insulator (SOI) substrate. The VCSEL operates at silicon transparent wavelengths ~1.57 μm with >1 mW CW power outcoupled from the semiconductor DBR, and single-mode operation up to 65 °C. The thermal resistance of our device is measured to be 1.46 K...

Silicon on insulator (SOI) CMOS offers performance gain over bulk CMOS mainly due to reduced parasitic capacitances and latchup. It is most promising technology when low cost low power and low voltage suppply is required. kink effect and self heating are two important points of concern in case of SOI MOSFET. In this paper we first briefly discuss the SOI technology, kink effect and lattice heat...

We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-onInsulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer on top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer usin...

We have recently observed and simulated confined acoustic phonons in both thin silicon-on insulator films and in SOI membranes [1]. Since progress in silicon device technology is going through increasing use of silicon-on-insulator (SOI) as a strategic device material to increase the operation speed of integrated circuits [2] modifications in the phonon spectrum are of strategic interest to dev...

The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator SOI has been investigated. Electrical and structural measurements after annealing show that boron deactivation and transient enhanced diffusion are reduced in SOI compared to bulk wafers. The reduction is strongest when the end-of-range defects of the preamorphizing implant are located deep within the silicon...

The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semico...

Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-electron Monte Carlo simulator has been used.  2001 Elsevier Science B.V. All rights reserved.