Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation...

Perovskite/Si tandem solar cells have the potential to considerably out-perform conventional solar cells. Under standard test conditions, perovskite/Si tandem solar cells already outperform the Si single junction. Under realistic conditions, however, as we show, tandem solar cells made from current record cells are hardly more efficient than the Si cell alone. We model the performance of realis...

The dynamics of laser heating and melting of Si in UHV is investigated by transient reflectivity with single pulse sensitivity. It is found that the heating and melting dynamics cannot be accounted for by a model of heat flow using the thermal and optical properties of Si. Experiment and theory can be reconciled assuming significantly smaller thermal conductivity and heat capacity at all temper...

In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently higher than the results of previous r...

A. Appendix A A.1. Proof of Theorem 1 The proof is by contradiction. Fix a distribution P satisfying conditional independence, and let x denote a fixed set of instances. Denote P(Y = 1|xi) = ηi and the optimal classifier by s∗ ∈ {0, 1}n. Suppose there exist indices j, k such that sj = 1, sk = 0 and ηj < ηk. Let s′ ∈ {0, 1}n be such that sj = 0 and sk = 1, but identical to s∗ otherwise i.e. si =...

Black phosphorus has been recently suggested as a very promising material for the use in 2D field-effect transistors. However, due to its poor stability under ambient conditions, this material has not yet received as much attention as for instance MoS2. We show that the recently demonstrated Al2O3 encapsulation leads to highly stable devices. In particular, we report our long-term study on high...

Recently, ultrathin crystalline silicon solar cells have gained tremendous interest because they are deemed to dramatically reduce material usage. However, the resulting conversion efficiency is still limited by the incomplete light absorption in such ultrathin devices. In this letter, we propose ultrathin a-Si/c-Si tandem solar cells with an efficient light trapping design, where a nanopyramid...