| This article describes an analog neuron and synapse cell that each consist of only one Single Electron Tunneling (SET) Transistor. Simulation results show that using the Random Weight Changing Learning algorithm, a small neural network with these devices can learn the XOR function. The periodic transfer function and the random ooset charges of the transistor can successfully be dealt with by ...

We have investigated the suppression of single-electron charging effects in metallic single-electron transistors when the conductance of the tunnel junctions becomes larger than the conductance quantum e2yh. We find that the Coulomb blockade of the conductance is progressively shifted at lower temperatures. The experimental results agree quantitatively with the available 1yT expansion at high t...

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We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti...

In this review, we describe recent progress made in the study of nanoparticles characterized by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Basic principles of STM measurements and single-electron tunneling phenomena through a single NP are summarized. We highlight the results of electrical and photonic properties on NPs studied by STM and STS. Because nanopar...

– The Langevin method for the calculation of the shot noise in correlated singleelectron tunneling is developed. Its equivalence to the existing Fokker-Plank-type approach is shown in the “orthodox” framework. The advantage of the Langevin method is a natural possibility to describe also the fluctuations in the high (“quantum”) frequency range. Correlated single-electron tunneling [1] has remai...

Abstract— According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of ele...