We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption ...

A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin-transport measurements on long-distance germanium devices in a magnetic field longitudinal to the initial spin orientation. The confluence of electron-phonon scattering (leading to Elliott-Yafet spin flips) and this previously unobserved physics enables the extr...

Both electrical injection and detection of spin-polarized electrons are demonstrated in a single wafer allsemiconductor GaAs-based lateral spintronic device, employing p+Ga,Mn As /n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. Spin-dependent phenomena, such as spin precession and spin-valve effect, are observed in nonlocal signal and the measurements reveal the unusual origin of ...

The combination between the spin-dependent and super-conducting (SC) transports is expected to provide intriguing properties such as crossed Andreev reflection and spin-triplet superconductivity. This may be able to open a new avenue in the field of spintronics, namely superconducting spintronics because a superconductor itself has great potential for future nanoelectronic applications. To obse...

Spin-valve, weak localization/antilocalization, and scanned probe microscopy measurements are used to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs at 4.2 K. An electrically insulating barrier layer is found to be required ...

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is prob...

Current-induced steady precessional modes in standard spin valves are usually excited as an interplay of spin-transfer torque, Gilbert damping, and external magnetic field. We propose an asymmetric spin valve, in which the spin current can excite stationary precessional modes also at zero external magnetic field. We also show that finite temperature can induce transitions between different dyna...

Using micromagnetic simulations, we have investigated spin dynamics in a spin-valve bilayer in the presence of a thermal gradient. The direction and the intensity of the gradient allow us to excite the spin wave modes of each layer selectively. This permits us to synchronize the magnetization precession of the two layers and to rectify the flows of energy and magnetization through the system. O...