Chlorine in a nitrogen ambient is used to clean silicon surfaces of impurities by etching a thin layer from the surface prior to silicon epitaxial growth. Silicon etch rates of 1-10 nm/min could be achieved for temperatures from 525C to 575C. The etching of a thin layer of silicon from the surface is also capable of removing phosphorus from the surface, which conventionally is difficult to remo...

Fabrication of fine surface textures is one the most effective technologies to provide new functions for materials. In this research, argon-ion sputter-etching was applied an α+β type Ti-6Al-4V alloy placed on a SUS304 steel disk at radio frequency power 200 W, 250 W and 300 0.9 ks 21.6 ks. For 1013 K annealed specimens, holes smaller than 500 nm diameters were densely formed surfaces when sput...