Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital allo...

The compressive strain effect on the magnetic ground state and electronic structure of strained GdTiO3 has been studied using the first-principles method. Unlike the cases of congeneric YTiO3 and LaTiO3, both of which become the A-type antiferromagnetism on the (0 0 1) LaAlO3 substrate despite their contrastive magnetism, the ground state of strained GdTiO3 on the LaAlO3 substrate changes from ...

We have used an ab initio SCF molecular orbital approach in conjunction with the isodesmic reaction procedure to investigate anomalous energy effects in strained aza systems and some of their nitro derivatives. The introduction of nitrogens into strained molecular frameworks is found to confer added degrees of stability. In general this increases with the number of nitrogens in a series of simi...

Compressively strained InSb structures aimed for p-channel heterostructure field effect transistors (HFETs) are analysed in order to maximise their hole mobility. We optimise the heterostructure by the change of the material composition, thickness of the layers and position of δ-doping. The splitting of light and heavy hole bands in compressively strained channels are calculated by nextnano sof...

We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed ~as experimentally observed!. However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi , due t...

Employment of the <100> channel direction in a strained-Si0.8Ge0.2 p-MOSFET provides a hole mobility enhancement as large as 25% and a parasitic resistance reduction of 20% compared to a <110> strained-Si0.8Ge0.2 channel p-MOSFET, which already has a better mobility and threshold voltage roll-off than the Si p-MOSFET. These results suggest that the <100> strained-SiGe-channel p-MOSFET can be us...

Unsaturated bridges that link the two cyclopentadienyl ligands together in strained ansa metallocenes are rare and limited to carbon-carbon double bonds. The synthesis and isolation of a strained ferrocenophane containing an unsaturated two-boron bridge, isoelectronic with a C=C double bond, was achieved by reduction of a carbene-stabilized 1,1'-bis(dihaloboryl)ferrocene. A combination of spect...

We have measured impact ionization coefficients, a and p, in 150 A pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. a and 0 in lattice-matched GaAs layers are found to be lower than those in strained Ino.zGacsAs and higher than those in strained Ina15Gac,,A10~,,As. fl is larger than a in all the samples. The results ...

We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...