In this paper, a new circuit scheme is proposed to reduce the power consumption of dynamic circuits. In the proposed circuit, an NMOS keeper transistor is used to maintain the voltage level in the output node against charge sharing, leakage current and noise sources. Using the proposed keeper scheme, the voltage swing on the dynamic node is lowered to reduce the power consumption of wide fan-in...

Aggressive technology scaling as per Moore’s law has resulted in elevated power dissipation levels especially due to a substantial increase in the subthreshold leakage power. Hence, designing low-power and energy-efficient integrated circuits (or Green Electronics) constitutes a key area for sustaining the irreversible growth of the global electronics and IT industry. Although improving the sub...

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is ...

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with O...