In this research, the effect of catalyst type on the CNTs synthesis was investigated. The carbonnanotubes (CNTs) were produced on stainless steel substrates and two of catalyst with differentcharacteristics by using Thermal chemical vapor deposition (TCVD) method. The catalysts have theimportant role for the growth carbon nanotubes (CNTs). Acetylene gas (C2H2) diluted by NH3 wasused as the reac...

Using a conventional thermal chemical vapor deposition (CVD) system, ethanol vapor was enclosed in a reactor, i.e., no flow, with Co/Mo dip-coated quartz substrates to synthesize submillimeter long vertically aligned single-walled carbon nanotube (SWNT) films successfully. The no-flow CVD method yielded an increase in film thickness of up to 0.11 mm compared with the normal flowing gas method f...

The lack of complete understanding of the substrate effects on carbon nanotubes (CNTs) growth poses a lot oftechnical challenges. Here, we report the direct growth of nanostructures such as the CNTs on stainless steel 304and brass substrates using thermal chemical vapor deposition (TCVD) process with C2H2 gas as carbon sourceand hydrogen as supporting gas mixed in Ar gas flow. We used an especi...

Multi-walled carbon nanotubes (MWCNTs) with systematically varied diameter distributions and defect densities were reproducibly grown from a modified catalyst structure templated in an amine-terminated fourth-generation poly(amidoamine) (PAMAM) dendrimer by microwave plasma-enhanced chemical vapor deposition. Thermal interface resistances of the vertically oriented MWCNT arrays as determined by...

in this research, the effect of catalyst type on the cnts synthesis was investigated. the carbonnanotubes (cnts) were produced on stainless steel substrates and two of catalyst with differentcharacteristics by using thermal chemical vapor deposition (tcvd) method. the catalysts have theimportant role for the growth carbon nanotubes (cnts). acetylene gas (c2h2) diluted by nh3 wasused as the reac...

This paper presents an application of Iterative Learning Control (ILC) methodology to the temperature proole control of a Rapid Thermal Processing (RTP) system for single wafer processing (SWP), a trend in semiconductor manufacturing. The motivation and the basic ideas are brieey introduced. The eeectiveness of the proposed method is demonstrated by the simulation studies of a simpliied model o...

The initial growth kinetics for SiH, chemical vapor deposition of Si on SiO, at low temperature (500-600 “C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below -0.7 monolayer Si coverage, the...