نتایج جستجو برای: thin film hydration

تعداد نتایج: 201552  

Journal: :journal of membrane science and research 0
mohammad khajouei department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167 majid peyravi department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167 mohsen jahanshahi department of chemical engineering, babol noshirvani university of technology, shariati ave.,babol, iran, post code 47148-71167

over the past decade, many applications were intended for filtration by membrane technology especially the thin film composite (tfc) membranes. in advanced developments of thin film membranes, an attempt was made to spread a new generation of membranes called thin film nano composite (tfn) membranes. however, in the last generation of tfns, an ultrathin selective film of nanoparticles is coated...

2006
Per K. Rekdal

In a recent paper [Phys. Rev. Lett. 97, 070401 (2006)] the transition rate of magnetic spin-flip of a neutral two-level atom trapped in the vicinity of a thick superconducting body was studied. In the present paper we will extend these considerations to a situation with an atom at various distances from a dielectric film. Rates for the corresponding electric dipole-flip transition will also be ...

Journal: :Microelectronics Reliability 2016
Dongseok Shin Min Soo Bae Ilgu Yun

Article history: Received 26 June 2016 Accepted 6 July 2016 Available online xxxx Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investiga...

2008
DAVID BACHMAN SAUL SCHLEIMER

If a tangle, K ⊂ B, has no planar, meridional, essential surfaces in its exterior then thin position for K has no thin levels.

1995

PRODUCT DESCRIPTION The AD688 is a high precision ±10 V tracking reference. Low tracking error, low initial error and low temperature drift give the AD688 reference absolute ±10 V accuracy performance previously unavailable in monolithic form. The AD688 uses a proprietary ion-implanted buried Zener diode, and laser-waferdrift-trimming of high stability thin-film resistors to provide outstanding...

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