A gate that offers different delays for different input-output paths through it, is known as a variable input delay (VID) gate. The upper bound on this differential delay capability is specified by the parameter “ub”. These gates can be used to minimize the active power of a digital CMOS circuit by a path balancing and glitch filtering techniques discussed in recent publications. In this paper,...

GATE is the only Galileo test and development environment worldwide where already today navigation is possible with realistic Galileo Signals on all frequencies in an outdoor area. GATE is a local ground-based “miniature navigation system” which will provide real Galileo signals already several years before the full operability of the Galileo system in space. Thus, GATE is an important intermed...

We investigate methods to estimate the transmission coefficient of high-κ gate stacks. Based on the commonly used Tsu-Esaki model, we approximate the WKB and Gundlach methods to be feasible for device simulators. Comparisons with a rigorous solution using the transfer-matrix method show good qualitative agreement. We further use the models to analyze the trade-off between barrier height and per...

We report on the realization of an all-optical transistor by mapping gate and source photons into strongly interacting Rydberg excitations with different principal quantum numbers in an ultracold atomic ensemble. We obtain a record switch contrast of 40% for a coherent gate input with mean photon number one and demonstrate attenuation of source transmission by over ten photons with a single gat...

Pronounced resonant absorption and frequency dispersion associated with an excitation of collective 2D plasmons have been observed in terahertz (0.5-4THz) transmission spectra of grating-gate 2D electron gas AlGaN/GaN HEMT (high electron mobility transistor) structures at cryogenic temperatures. The resonance frequencies correspond to plasmons with wavevectors equal to the reciprocal-lattice ve...

Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to 15nm. Complementary low-barrier silicides were used to reduce contact and series resistance. Minimum gate-length transistors with Tox=40Å show PMOS |Idsat|=270μA/μm and NMOS |Idsat|=190μA/μm with Vds=1.5V, |Vg-Vt|=1.2V and, Ion/Ioff>10 . A simple transmission model, fitted to experimental data, is used t...

We demonstrate the excitation and gate control of highly confined surface plasmon polaritons propagating through monolayer graphene using a silicon diffractive grating. The normal-incidence infrared transmission spectra exhibit pronounced dips due to guided-wave resonances, whose frequencies can be tuned over a range of ~80 cm(-1) by applying a gate voltage. This novel structure provides a way ...

We consider quantum transmission through double-bend [Formula: see text]- and Z-shaped waveguides controlled by the finger gate potential. Using the effective non-Hermitian Hamiltonian approach we explain the resonances in transmission. We show a difference in transmission in the short waveguides that is the result of different chirality in Z and [Formula: see text] waveguides. We demonstrate t...

We present conceptual models for fundamental logic gates using solitons as bit pulses in the Toda lattice. The transmission rate of the soliton is controllable by another soliton and the control of the soliton transmission is applicable to a NOT gate. Two-input system with appropriate transmission filters were constructed to realize AND and OR gates. We numerically demonstrated the soliton tran...