نتایج جستجو برای: tunnel field effect transistor
تعداد نتایج: 2369470 فیلتر نتایج به سال:
A Hetero Dielectric Tunnel field effect transistor with the spacer on both sides of gate is proposed in this paper. The performance and characteristics using ATLAS Technology Computer-Aided Design 5nm regime were analyzed. band-to-band tunneling leakage current will be reduced by introducing heterojunction hetero dielectric material structure. In transistor, double metal high-k improves high su...
In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tu...
High speed and low power dissipation devices are expected from future generation technology of Nano-electronic devices. Tunnel field effect transistor (TFET) is unique to the prominent in applications. To minimize leakage currents, tunnel switching TFETs superior conventional MOS FETs. The gate coverage area different fin shape hybrid field-effect transistors more impacted on electric character...
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