The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

The rate of interband electron transitions assisted by LO-phonon emission is studied in an InAs/ GaSb double quantum well heterostructure, which models the active region of a type-II intersubband cascade laser. The main peak of the electron-phonon resonance corresponds to electron transitions from the lowest electron-like subband to the top of the highest light-hole-like subband that is displac...

Excitation of hybrid modes constituted by different material-supported polaritons is a common way to enhance the near-field radiative energy transport, which has fascinating promise in applications thermal photonics. Here, we investigate near--field radiation mechanisms heterostructure composed $h\mathrm{BN}$ film and black phosphorus single layer. The results show that this heterostructured sy...

It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...

In this article we develop an effective medium model to characterize the electron wave propagation in graphene based nanostructures with electrostatic and magnetic vector potentials imposed on their surface. We use a numerical algorithm determine parameters of heterostructure calculate electronic band structure system. apply our formalism analyze superlattices solely potential reveal that respo...

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