نتایج جستجو برای: ultra low noise amplifier

تعداد نتایج: 1415547  

Journal: :Wireless Engineering and Technology 2011
Chia-Song Wu Tah-Yeong Lin Chien-Huang Chang Hsien-Ming Wu

The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3 10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15 μm G...

2007
Sung-Soo Kim

ETRI Journal, Volume 29, Number 5, October 2007 ABSTRACT⎯An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-μm CMOS process and adopts a twostage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are m...

2013
Anil Dutt

At receiving front end, the low noise amplifier design, being the first building block to receive the signal puts a tremendous challenge on modern day radio frequency engineers to meet real world problems involving trade-off in design issues. In this paper the recent trends for noise figure are streamlined in concurrence to Ultra Wide Band (UWB) radio transmission spectrum. A comparative study ...

2009
S.-K. Wong M. N. B. Osman

A single-stage ultra-wideband (UWB) CMOS low noise amplifier (LNA) employing interstage matching inductor on conventional cascode inductive source degeneration structure is presented in this paper. The proposed LNA is implemented in 0.18μm CMOS technology for a 3 to 5 GHz ultra-wideband system. By careful optimization, an interstage inductor can increase the overall broadband gain while maintai...

2015
Ahmed M. Gamal Hesham N. Ahmed Magdy A. El-kfafy

150104-8686-IJECS-IJENS © August 2015 IJENS I J E N S  Abstract— In this paper, a dual-band, multi-standard, concurrent, low noise amplifier operating in the 2.45/5.25 GHz bands is presented. The amplifier design is based on an ultra low noise PHEMT transistor connected in the common source configuration with inductive degeneration. The proposed amplifier stability is ensured using a series ga...

2004
Jiangfeng Wu Gary K. Fedder

This paper describes a CMOS capacitive sensing amplifier for a monolithic MEMS accelerometer fabricated by post-CMOS surface micromachining. This chopper stabilized amplifier employs capacitance matching with optimal transistor sizing to minimize sensor noise floor. Offsets due to sensor and circuit are reduced by ac offset calibration and dc offset cancellation based on a differential differen...

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