Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically...

Abstract Molecular dynamics simulations have been carried out to study the interaction between two point defects in III-nitride materials (AlN, GaN and InN): a substitutional metal atom (Indium, Aluminum, Gallium) N-vacancy. The Stillinger-Weber (S-W) empirical potential is used. By calculating energies of different configurations with these defects, it shown that indium AlN or aluminum gallium...

Positron annihilation spectroscopy, when combined with highquality supporting modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment aroun...

Due to the excellent electronic, optical, thermal, chemical, and mechanical properties of graphene, it has been applied in microdevices and nanodevices. However, there are some structural defects in graphene limiting its application in micro electromechanical systems (MEMS). These structural defects are inevitable during processing, and it is difficult to assess their effect on the micro/nano d...

We show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V -P and V -As, are identified in electron irradiated Si. The formation of native vacancy defects is observed in highly As-doped Si at the doping level of 10...

Processing the SrTiO(3)(001) surface results in the self-assembly of reduced titanate nanowires whose widths are approximately 1 nm. We have imaged these nanowires and their defects at elevated temperatures by atomic resolution scanning tunneling microscopy. The nanowire structure is modeled with density functional theory, and defects observed in the center of the nanowire are determined to be ...

We have used a low-energy positron beam to identify and quantify the dominant vacancy defects in InN layers grown on Al2O3 by molecular beam epitaxy. By applying both continuous and pulsed positron beams, we can show that In vacancies are formed during the crystal growth. Their concentration decreases from B5 10 to below 10 cm 3 with increasing layer thickness (120–800 nm). The In vacancy conce...

Vacancies and interstitial atoms are primary lattice (point) defects that cause observable microstructural changes, such as the formation of dislocation loops and voids in crystalline solids. These defects' diffusion properties determine the phase stability and environmental resistibility of macroscopic materials under ambient conditions. Although in situ methods have been proposed for measurin...

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, ...

First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at M...