نتایج جستجو برای: via

تعداد نتایج: 619242  

2009
James Hermanowski

This paper reviews the major adhesives and processes used for 3D TSV thin wafer handling, provides thermal and other performance data on the materials and processes and attempts to establish a first order estimate of process related thermal performance using a common analytical method.

2005
Dimitris N. Politis

A new multivariate heavy-tailed distribution is proposed as an extension of the univariate distribution of Politis (2004). The properties of the new distribution are discussed, as well as its effectiveness in modeling ARCH/GARCH residuals. A practical procedure for multiparameter numerical maximum likelihood is also given, and a real data example is worked out. JEL codes: C3; C5.

2012
Fernando H. Ramírez-Guadiana Marcelo Barraza-Salas Norma Ramírez-Ramírez Mayte Ortiz-Cortés Peter Setlow Mario Pedraza-Reyes

Journal: :Microelectronics Reliability 2012
A. S. Budiman H.-A.-S. Shin B.-J. Kim S.-H. Hwang H.-Y. Son M.-S. Suh Q.-H. Chung K.-Y. Byun N. Tamura M. Kunz Y.-C. Joo

Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory (LANL), Los Alamos, NM 87545, United States Dept. of Materials Science & Engineering, Seoul National University (SNU), Republic of Korea PKG Development Group, R&D Division, Hynix Semiconductor Inc., Republic of Korea Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA 94720, United...

Journal: :Microelectronics Reliability 2015
Jin Hyung Choi Jong-Tae Park

2004
Valery R. Marinov

The direct write technology provides an interesting opportunity for plugging blind via holes as a more precise alternative to currently used screen printing processes. This technology provides a complete, void-less filling of the via and fabrication of the interconnects extending from the via in one single step. After deposition, the material is heat treated (sintered) to densify into a highly ...

Journal: :Microelectronics Reliability 2006
Hideaki Tsuchiya Shinji Yokogawa

We studied electromigration (EM) lifetimes and void growth at low cumulative failure probability. We carried out EM test in damascene Cu lines using sudden-death type test structures. Its cumulative failure probability ranges from 0.005 to 90%. To investigate the void growth behaviour, Cu microstructures was investigated. EM lifetime shows correlation with the void nucleation site and the void ...

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