Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict electric field within wide-bandgap semiconductors. The issue is daunting number of charge-trap candidates which means treatment generally qualitative or uses generalized models that do not consider trap's particular electronic structure. a nonetheless crucial quantity determining operation devices and perfor...

Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...

A theoretical investigation is made of the dispersion characteristics of plasmons in a twodimensional periodic system of semiconductor (dielectric) cylinders embedded in a dielectric (semiconductor) background. We consider both square and hexagonal arrangements and calculate extensive band structures for plasmons using a plane-wave method within the framework of a local theory. It is found that...

Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography Ravi Agrawal, Rodrigo A. Bernal, Dieter Isheim, and Horacio D. Espinosa* Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3111, United States Department of Materials Science and Engineering, North...